Effects of notches on the order of flux-closure state formation in bi-rings by micromagnetic simulation

The effects of the number and the location of notches on the formation of flux-closure states in bi-rings with fields applied in the x direction (i.e., along the short axis direction of bi-rings) and y direction (i.e., along the long axis direction of bi-rings) are investigated using micromagnetic simulation. For the bi-rings with one notch and the bi-rings with two notches symmetric about y axis, the order of flux-closure state formation in each ring can be controlled. But the flux-closure state forms simultaneously in each ring for the bi-rings with two notches symmetric about x axis. For the bi-rings with two notches that are symmetric neither about x axis nor about y axis, only one ring can form a flux-closure state in the y-direction field and no flux-closure state can be found in rings in the x-direction field. Therefore, logic states can be defined by controlling the order of flux-closure state formation, which can be utilized in future logic devices.     

半“V”字形铁电液晶器件的制备

实验研究了N*-Sc*相变时施加直流电压的强度对铁电液晶分子层排列和电光性能的影响,由此筛选了合适的直流电压强度,并研制了可实现连续灰度级的半“V”字形铁电液晶样品.实验说明N*-Sc*相变时施加直流电压强度大有利于获得性能良好的器件.采用N*-Sc*相变施加4V/μm直流电压,制备半“V”字形铁电液晶器件,经测试器件饱和电压为5V,对比度为112.8,上升时间和下降时间分别为622.14 μs和374.7 μs.     

集成马赫-曾德尔热光耦合器的可调谐振环优化设计

根据耦合模理论,推导出可调谐光波导谐振环的光强和相位传递函数的表达式,并分析了可调谐谐振环的传输特性.结果表明,谐振环中集成的马赫-曾德尔耦合器的参量设定和调谐方式直接影响谐振环的谐振频率移动范围和调制功率.通过改变耦合器参量对谐振环进行优化设计,在中心波长为1550 am附近,谐振环半径2 cm,传输损耗0.08 dB/cm的情况下,实现了清晰度和最佳谐振深度的调谐,谐振频率的移动范围低于0.027 GHz,降低了谐振环对频率调制器的调频要求,同时降低了耦合器的调制功率.     

氮化镓基绿光LED中V坑对空穴电流分布的影响

采用实验与理论模拟相结合的方法,研究了氮化镓基绿光发光二极管（LED）中V坑对空穴电流分布的影响。首先,实验获得了V坑面积占比不同的3种样品;然后,建立数值模型,使得理论计算的外量子效率（EQE）及电压与实验测试的变化趋势相匹配,从而确立了所用数值模型的可信性。计算结果显示：V坑改变了空穴电流的分布,空穴电流密度在V坑处显著增加,在平台处明显减小。进一步的分析表明：V坑面积占比在0~10%范围内,V坑空穴电流占比与V坑面积占比之间呈近线性增长（斜率为2.06）,但V坑空穴注入在整个空穴注入的过程中仍未占主导。     

托卡马克电源窄带宽近基频间谐波检测方法

为解决托卡马克磁体电源系统中出现的低频谐波检测问题,研究了基于可调参数 Q 的 F42N150 单 频模拟陷波器和椭圆数字带通滤波器的混合检测算法。通过边界优化有效剔除干扰基波及 5 次谐波,实现有效的 频谱分离。利用 MATLAB 优化了为设计过程进行,使用基于 DSP 的数字分析系统进行了试验验证,验证了检测 算法的正确性和有效性。      

Stress field at a tip of a prefabricated spiral V-notch

Based on the tranditional V-notched blasting, a technique of spirally V-notched blasting to loosen earth and rock was presented. Fracture mechanics and Westergaard stress function were adopted to build a complex stress function to derive the plane stress and strain fields at one tip of the crack under a quasi-static pressure. An expression was formulated to define the stress intensity factor of spiral V-notch loosen blasting. Factors that have effects on the stress intensity factor were studied. It is demonstrated that spiral V-notch loosen blasting is an extension of vertical V-notch blasting, straight cracking, and alike theories.     

The expression of stress and strain at the tip of notch in reissner plate

In this paper, the eigenequation of notch in Reissner plate is derived by the eigenfunction method. Eigenvalues of different notches with different angles are calculated by Muller iteration method.The expression of stress and strain at the tip of notch in Reissner plate is obtained.     

Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

Carrier transport via the V-shaped pits(V-pits) in InGaN/GaN multiple-quantum-well(MQW) solar cells is numerically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the flat quantum wells. As the barrier thickness of the flat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.     

量子阱结构对含V形坑InGaN/GaN蓝光LED效率衰减的影响

使用MOCVD在图形化Si衬底上生长了含V形坑的InGaN/GaN蓝光LED。通过改变生长温度,生长了禁带宽度稍大的载流子限制阱和禁带宽度稍小的发光阱,研究了两类量子阱组合对含V形坑InG aN/GaN基蓝光LED效率衰减的影响。使用高分辨率X射线衍射仪和LED电致发光测试系统对LED外延结构和LED光电性能进行了表征。结果表明:限制阱靠近n层、发光阱靠近p层的新型量子阱结构,在室温75 A/cm~2时的外量子效率相对于其最高点仅衰减12.7%,明显优于其他量子阱结构的16.3%、16.0%、28.4%效率衰减,且只有这种结构在低温时(T≤150 K)未出现内量子效率随电流增大而剧烈衰减的现象。结果表明,合理的量子阱结构设计能够显著提高电子空穴在含V形坑量子阱中的有效交叠,促进载流子在阱间交互,提高载流子匹配度,抑制电子泄漏,从而减缓效率衰减、提升器件光电性能。     

半覆水相变V形峡谷场地P波入射下的空间地震动散射频域理论解、验证及特征

克服介质相变、峡谷分层且局部地形覆水导致的固有边界值难题,首次推导并得到了半覆水相变V形峡谷场地对P波激励下的散射理论解,验证理论解的正确性,探究了相变界面的有无、入射波频率和入射角对地表位移的显著影响,突出并重点强调了覆水因素对结果影响的不可忽视性。分析结果表明,(1)以经典算例为标准,对比验证了本文理论解的正确性,解释并澄清了峡谷局部可预测性的微小偏差的来源。(2)与未覆水部位相比,峡谷覆水部位表面位移显著增大;与峡谷满水状态相比,相变面的存在使位移增大的初始位置向峡谷中间移动;不同的入射波频率和入射角下,地面运动情况存在显著差异,随着入射角的增大,水平方向的位移逐渐增大,竖直方向的位移逐渐减小。本文研究可为覆水V形峡谷的长大结构多点地震动的合理输入提供基础性研究依据,兼有理论意义与应用价值。